Aravind Puthirath Balan, Aditya Kumar, Tanja Scholz, Zhongchong Lin, Aga Shahee, Shuai Fu, Thibaud Denneulin, Joseph Vas, Andras Kovacs, Rafal E. Dunin-Borkowski, Hai I. Wang, Jinbo Yang, Bettina Lotsch, Ulrich Nowak, Mathias Klaeui
Two-dimensional van der Waals (vdW) heterostructures are an attractive platform for studying exchange bias due to their defect free and atomically flat interfaces. Chromium thiophosphate (CrPS4), an antiferromagnetic material, possesses uncompensated magnetic spins in a single layer, rendering it a promising candidate for exploring exchange bias phenomena. Recent findings have highlighted that naturally oxidized vdW ferromagnetic Fe3GeTe2 exhibits exchange bias, attributed to the antiferromagnetic coupling of its ultrathin surface oxide layer (O-FGT) with the underlying unoxidized Fe3GeTe2. Anomalous Hall measurements are employed to scrutinize the exchange bias within the CrPS4/(O-FGT)/Fe3GeTe2 heterostructure. This analysis takes into account the contributions from both the perfectly uncompensated interfacial CrPS4 layer and the interfacial oxide layer. Intriguingly, a distinct and non-monotonic exchange bias trend is observed as a function of temperature below 140 K. The occurrence of exchange bias induced by a 'pre-set field' implies that the prevailing phase in the polycrystalline surface oxide is ferrimagnetic Fe3O4. Moreover, the exchange bias induced by the ferrimagnetic Fe3O4 is significantly modulated by the presence of the van der Waals antiferromagnetic CrPS4 layer, forming a heterostructure, along with additional iron oxide phases within the oxide layer. These findings underscore the intricate and complex nature of exchange bias in van der Waals heterostructures, highlighting their potential for tailored manipulation and control.
Xue He, Shilei Ding, Hans Gløckner Giil, Jicheng Wang, Zhongchong Lin, Zhongyu Liang, Jinbo Yang, Mathias Kläui, Arne Brataas, Yanglong Hou, Rui Wu
Spin Seebeck effect (SSE) refers to the creation of spin currents due to a temperature gradient in the magnetic materials or across magnet-normal metal interfaces, which can be electrically detected through the inverse spin Hall effect (ISHE) when in contact with heavy metals. It offers fundamental insights into the magnetic properties of materials, including the magnetic phase transition, static magnetic order, and magnon excitations. However, the SSE in van der Waals antiferromagnet is still elusive, especially across the spin-flip transition. Here, we demonstrate the SSE in the weak exchange coupled van der Waals antiferromagnet CrPS$_4$. The SSE increases as the magnetic field increases before the spin-flip transition due to the enhancement of the thermal spin current as a function of the applied field. A peak of SSE is observed at the spin-flip field, which is related to the magnon mode edges across the spin-flip field. Our results extend SSE research to van der Waals antiferromagnets and demonstrate an enhancement of SSE at the spin-flip transition.
Haoran Guo, Zhongchong Lin, Jinhao Lu, Chao Yun, Guanghui Han, Shoutong Sun, Yu Wu, Wenyun Yang, Dongdong Xiao, Zhifeng Zhu, Licong Peng, Yu Ye, Yanglong Hou, Jinbo Yang, Zhaochu Luo
Two-dimensional antiferromagnets, combining the dual advantages of van der Waals (vdW) and antiferromagnetic materials, provide an unprecedented platform for exploring emergent spin-related phenomena. However, electrical manipulation of Néel vectors in vdW antiferromagnets - the cornerstone of antiferromagnetic spintronics - remains challenging. Here, we report layer-dependent electrical switching of the Néel vector in an A-type vdW antiferromagnet $(Fe,Co)_3$$GaTe_2$ (FCGT) with perpendicular magnetic anisotropy. The Néel vector of FCGT with odd-number vdW layers can be 180° reversed via spin-orbit torques. Furthermore, we achieve field-free switching in an all-vdW, all-antiferromagnet heterostructure of FCGT/CrSBr in which the noncollinear interfacial spin texture breaks the mirror symmetry. Our results establish layer-controlled spin symmetries and interfacial spin engineering as universal paradigms for manipulating antiferromagnetic order, paving the way for realising reliable and efficient vdW antiferromagnetic devices.
Tingting Wang, Dingyang Zhang, Shiqi Yang, Zhongchong Lin, Quan Chen, Jinbo Yang, Qihuang Gong, Zuxin Chen, Yu Ye, Wenjing Liu
The strong coupling between photons and matter excitations such as excitons, phonons, and magnons is of central importance in the study of light-matter interactions. Bridging the flying and stationary quantum states, the strong light-matter coupling enables the coherent transmission, storage, and processing of quantum information, which is essential for building photonic quantum networks. Over the past few decades, exciton-polaritons have attracted substantial research interest due to their half-light-half-matter bosonic nature. Coupling exciton-polaritons with magnetic orders grants access to rich many-body phenomena, but has been limited by the availability of material systems that exhibit simultaneous exciton resonances and magnetic ordering. Here we report magnetically-dressed microcavity exciton-polaritons in the van der Waals antiferromagnetic (AFM) semiconductor CrSBr coupled to a Tamm plasmon microcavity. Angle-resolved spectroscopy reveals an exceptionally high exciton-polariton coupling strength attaining 169 meV, demonstrating ultrastrong coupling that persists up to room temperature. Temperature-dependent exciton-polariton spectroscopy senses the magnetic order change from AFM to paramagnetism in CrSBr, confirming its magnetic nature. By applying an out-of-plane magnetic field, an effective tuning of the polariton energy is further achieved while maintaining the ultrastrong exciton-photon coupling strength, which is attributed to the spin canting process that modulates the interlayer exciton interaction. Our work proposes a hybrid quantum platform enabled by robust opto-electronic-magnetic coupling, promising for quantum interconnects and transducers.
Shiqi Yang, Xiaolong Xu, Bo Han, Pingfan Gu, Roger Guzman, Yiwen Song, Zhongchong Lin, Peng Gao, Wu Zhou, Jinbo Yang, Zuxin Chen, Yu Ye
The manipulation of two-dimensional (2D) magnetic order is of significant importance to facilitate future 2D magnets for low-power and high-speed spintronic devices. Van der Waals stacking engineering makes promises for controllable magnetism via interlayer magnetic coupling. However, directly examining the stacking order changes accompanying magnetic order transitions at the atomic scale and preparing device-ready 2D magnets with controllable magnetic orders remain elusive. Here, we demonstrate effective control of interlayer stacking in exfoliated CrBr$_3$ via thermally assisted strain engineering. The stable interlayer ferromagnetic (FM), antiferromagnetic (AFM), and FM-AFM coexistent ground states confirmed by the magnetic circular dichroism measurements are realized. Combined with the first-principles calculations, the atomically-resolved imaging technique reveals the correlation between magnetic order and interlay stacking order in the CrBr$_3$ flakes unambiguously. A tunable exchange bias effect is obtained in the mixed phase of FM and AFM states. This work will introduce new magnetic properties by controlling the stacking order, and sequence of 2D magnets, providing ample opportunities for their application in spintronic devices.
Chao Yun, Haoran Guo, Zhongchong Lin, Licong Peng, Zhongyu Liang, Miao Meng, Biao Zhang, Zijing Zhao, Leran Wang, Yifei Ma, Yajing Liu, Weiwei Li, Shuai Ning, Yanglong Hou, Jinbo Yang, Zhaochu Luo
The discovery of magnetism in van der Waals (vdW) materials has established unique building blocks for the research of emergent spintronic phenomena. In particular, owing to their intrinsically clean surface without dangling bonds, the vdW magnets hold the potential to construct a superior interface that allows for efficient electrical manipulation of magnetism. Despite several attempts in this direction, it usually requires a cryogenic condition and the assistance of external magnetic fields, which is detrimental to the real application. Here, we fabricate heterostructures based on Fe3GaTe2 flakes that possess room-temperature ferromagnetism with excellent perpendicular magnetic anisotropy. The current-driven non-reciprocal modulation of coercive fields reveals a high spin-torque efficiency in the Fe3GaTe2/Pt heterostructures, which further leads to a full magnetization switching by current. Moreover, we demonstrate the field-free magnetization switching resulting from out-of-plane polarized spin currents by asymmetric geometry design. Our work could expedite the development of efficient vdW spintronic logic, memory and neuromorphic computing devices.