Layer-dependent field-free switching of Néel vector in a van der Waals antiferromagnet
Haoran Guo, Zhongchong Lin, Jinhao Lu, Chao Yun, Guanghui Han, Shoutong Sun, Yu Wu, Wenyun Yang, Dongdong Xiao, Zhifeng Zhu, Licong Peng, Yu Ye, Yanglong Hou, Jinbo Yang, Zhaochu Luo
Abstract
Two-dimensional antiferromagnets, combining the dual advantages of van der Waals (vdW) and antiferromagnetic materials, provide an unprecedented platform for exploring emergent spin-related phenomena. However, electrical manipulation of Néel vectors in vdW antiferromagnets - the cornerstone of antiferromagnetic spintronics - remains challenging. Here, we report layer-dependent electrical switching of the Néel vector in an A-type vdW antiferromagnet $(Fe,Co)_3$$GaTe_2$ (FCGT) with perpendicular magnetic anisotropy. The Néel vector of FCGT with odd-number vdW layers can be 180° reversed via spin-orbit torques. Furthermore, we achieve field-free switching in an all-vdW, all-antiferromagnet heterostructure of FCGT/CrSBr in which the noncollinear interfacial spin texture breaks the mirror symmetry. Our results establish layer-controlled spin symmetries and interfacial spin engineering as universal paradigms for manipulating antiferromagnetic order, paving the way for realising reliable and efficient vdW antiferromagnetic devices.