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"au:"S. Valdueza-Felip"" — arXiv2 Search
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Dec 24, 2021
Comparison of the material quality of AlxIn1-xN (x ~ 0-0.50) films deposited on Si (100) and (111) by reactive RF sputtering
Oct 24, 2016
P-i-n InGaN homojunctions (10-40% In) synthesized by plasma-assisted molecular beam epitaxy with extended photoresponse to 600 nm
Feb 23, 2016
Effect of the quantum well thickness on the performance of InGaN photovoltaic cells
Oct 21, 2014
High In-content InGaN layers synthesized by plasma-assisted molecular-beam epitaxy: growth conditions, strain relaxation and In incorporation kinetics