Showing 1–19 of 19 results
/ Date/ Name
Feb 28, 2025Holes in silicon are heavier than expected: transport properties of extremely high mobility electrons and holes in silicon MOSFETsOct 21, 2024A 300 mm foundry silicon spin qubit unit cell exceeding 99% fidelity in all operationsOct 15, 2023A singlet-triplet hole-spin qubit in MOS siliconJul 23, 2023Characterizing non-Markovian Quantum Process by Fast Bayesian TomographyJul 30, 2021Fast Bayesian tomography of a two-qubit gate set in siliconDec 18, 2020Single-electron spin resonance in a nanoelectronic device using a global fieldDec 9, 2020Electrical control of the $g$-tensor of a single hole in a silicon MOS quantum dotAug 10, 2020Coherent spin qubit transport in siliconFeb 5, 2019Coherent spin control of s-, p-, d- and f-electrons in a silicon quantum dotDec 20, 2018Single-spin qubits in isotopically enriched silicon at low magnetic fieldSep 6, 2018Gate-based single-shot readout of spins in siliconJan 14, 2018Spin filling and orbital structure of the first six holes in a silicon metal-oxide-semiconductor quantum dotMar 14, 2017Thermal-error regime in high-accuracy gigahertz single-electron pumpingAug 27, 2016Impact of g-factors and valleys on spin qubits in a silicon double quantum dotSep 2, 2015Pauli Spin Blockade of Heavy Holes in a Silicon Double Quantum DotMay 5, 2015Spin-orbit coupling and operation of multi-valley spin qubitsOct 9, 2014Quantifying the quantum gate fidelity of single-atom spin qubits in silicon by randomized benchmarkingDec 19, 2006Gate-controlled charge transfer in Si:P double quantum dotsApr 18, 2006Microsecond resolution of quasiparticle tunneling in the single-Cooper-pair-transistor