Showing 1–10 of 10 results
/ Date/ Name
Jun 8, 2023Ultraviolet Photodetectors based on GaN and AlGaN/AlN Nanowire Ensembles: Effects of Planarization with Hydrogen Silsesquioxane and Nanowire ArchitectureDec 24, 2021Comparison of the material quality of AlxIn1-xN (x ~ 0-0.50) films deposited on Si (100) and (111) by reactive RF sputteringOct 26, 2020Solubility limit of Ge Dopants in AlGaN: a Chemical and Microstructural Investigation down to the NanoscaleNov 29, 2019Assessment of AlGaN/AlN superlattices on GaN nanowires as active region of electron-pumped ultraviolet sourcesOct 25, 2018Electrical and Optical Properties of Heavily Ge-Doped AlGaNOct 24, 2016P-i-n InGaN homojunctions (10-40% In) synthesized by plasma-assisted molecular beam epitaxy with extended photoresponse to 600 nmApr 1, 2016Ge doping of GaN beyond the Mott transitionFeb 23, 2016Effect of the quantum well thickness on the performance of InGaN photovoltaic cellsJun 1, 2015Nonpolar m-plane GaN/AlGaN heterostructures with intersubband transitions in the 5 to 10 THz bandApr 20, 2015Intersubband transitions in nonpolar GaN/Al(Ga)N heterostructures in the short and mid-wavelength infrared regions