Showing 21–37 of 37 results
/ Date/ Name
Nov 2, 2021Multiscale simulations of uni-polar hole transport in (In,Ga)N quantum well systemsAug 29, 2019Fully analytic valence force field model for the elastic and inner elastic properties of diamond and zincblende crystalsMar 7, 2026Class Visualizations and Activation Atlases for Enhancing Interpretability in Deep Learning-Based Computational PathologyDec 27, 2021Secondary Use of Clinical Problem List Entries for Neural Network-Based Disease Code AssignmentAug 11, 2017Impact of second-order piezoelectricity on electronic and optical properties of $c$-plane In$_{x}$Ga$_{1-x}$N quantum dots: Consequences for long wavelength emittersSep 26, 2024Zero- and Few-shot Named Entity Recognition and Text Expansion in Medication Prescriptions using ChatGPTOct 22, 2021Fully analytic valence force fields for the relaxation of group-IV semiconductor alloys: elastic properties of group-IV materials calculated from first principlesAug 10, 2022Impact of random alloy fluctuations on the electronic and optical properties of (Al,Ga)N quantum wells: Insights from tight-binding calculationsAug 7, 2019Comparison of first principles and semi-empirical models of the structural and electronic properties of Ge$_{1-x}$Sn$_{x}$ alloysNov 10, 2008A comparison of atomistic and continuum theoretical approaches to determine electronic properties of GaN/AlN quantum dotsOct 16, 2019Electronic structure of semiconductor nanostructures: A modified localization landscape theoryDec 14, 2006Influence of symmetry and Coulomb-correlation effects on the optical properties of nitride quantum dotsJul 23, 2013Impact of cation-based localized electronic states on the conduction and valence band structure of AlInN alloysSep 23, 2015Structural, electronic, and optical properties of $m$-plane InGaN/GaN quantum wells: Insights from experiment and atomistic theoryOct 15, 2013Composition dependent band gap and band edge bowing in AlInN: A combined theoretical and experimental studySep 14, 2013Electronic properties of site-controlled (111)-oriented zinc-blende InGaAs/GaAs quantum dots calculated using a symmetry adapted $\mathbf{k}\cdot\mathbf{p}$ HamiltonianFeb 18, 2008Spin-orbit coupling and crystal-field splitting in the electronic and optical properties of nitride quantum dots with a wurtzite crystal structure