Showing 1–20 of 36 results
/ Date/ Name
Jun 2, 2024Electric-Field Control of Magnetic Skyrmion Chirality in a Centrosymmetric 2D van der Waals MagnetJul 13, 2019Topological magnetic-spin textures in two-dimensional van der Waals Cr2Ge2Te6Mar 14, 2013Ferroelectric switching dynamics of topological vortex domains in a hexagonal manganiteDec 4, 2020Electron pairing in the pseudogap state revealed by shot noise in copper-oxide junctionsNov 28, 2015Record Surface State Mobility and Quantum Hall Effect in Topological Insulator Thin Films via Interface EngineeringMar 8, 2025Single-layer magnet phase in intrinsic magnetic topological insulators, $[\mathrm{MnTe}][\mathrm{Bi}_{2}\mathrm{Te}_{3}]_{\mathrm{n}}$, far beyond the thermodynamic limitJan 25, 2024Buffer-layer-controlled Nickeline vs Zinc-Blende/Wurtzite-type MnTe growths on c-plane Al2O3 substratesApr 29, 2022Site-specific electronic and magnetic excitations of the skyrmion material Cu$_2$OSeO$_3$Mar 22, 2020Gate-Tunable Semiconductor Heterojunctions from 2D/3D van der Waals InterfacesSep 12, 2017Atomically-thin Femtojoule Filamentary MemristorJun 12, 2019Record-High Proximity-Induced Anomalous Hall Effect in (Bi$_x$Sb$_{1-x}$)2Te$_3$ Thin Film Grown on CrGeTe$_3$ SubstrateJul 23, 2021Hybrid symmetry epitaxy of superconducting Fe(Te,Se) film on a topological insulatorMar 31, 2022Anomalous Hall Effect and Perpendicular Magnetic Anisotropy in Ultrathin Ferrimagnetic NiCo$_2$O$_4$ FilmsMar 2, 2022Polaronic Conductivity in Cr$_2$Ge$_2$Te$_6$ Single CrystalsNov 24, 2024Charge gain via solid-state gating of an oxide Mott systemOct 4, 2023Critical Role of Disorder for Superconductivity in the Series of Epitaxial Ti(O,N) FilmsOct 3, 2023The effect of surface oxidation and crystal thickness on magnetic properties and magnetic domain structures of Cr2Ge2Te6Aug 31, 2018Engineering artificial topological phases via superlatticesMay 17, 2014Unfolding of vortices into topological stripes in a multiferroic materialJun 9, 2014Robust topological surface states of Bi2Se3 thin films on amorphous SiO2/Si substrate and a large ambipolar gating effect