Bo Li, Jiahao Kang, Yubo Ma, Feng-Lin Liu, Bin Liu, Fang-Lue Zhang, Lin Gao
3D Gaussian representations have emerged as a powerful paradigm for digital head modeling, achieving photorealistic quality with real-time rendering. However, intuitive and interactive creation or editing of 3D Gaussian head models remains challenging. Although 2D sketches provide an ideal interaction modality for fast, intuitive conceptual design, they are sparse, depth-ambiguous, and lack high-frequency appearance cues, making it difficult to infer dense, geometrically consistent 3D Gaussian structures from strokes - especially under real-time constraints. To address these challenges, we propose SketchFaceGS, the first sketch-driven framework for real-time generation and editing of photorealistic 3D Gaussian head models from 2D sketches. Our method uses a feed-forward, coarse-to-fine architecture. A Transformer-based UV feature-prediction module first reconstructs a coarse but geometrically consistent UV feature map from the input sketch, and then a 3D UV feature enhancement module refines it with high-frequency, photorealistic detail to produce a high-fidelity 3D head. For editing, we introduce a UV Mask Fusion technique combined with a layer-by-layer feature-fusion strategy, enabling precise, real-time, free-viewpoint modifications. Extensive experiments show that SketchFaceGS outperforms existing methods in both generation fidelity and editing flexibility, producing high-quality, editable 3D heads from sketches in a single forward pass.
Wei Cao, Jiahao Kang, Kaustav Banerjee
This paper introduces monolayer molybdenum disulfide (MoS2) based junction-less (JL) field-effect transistor (FET) and evaluates its performance at the smallest foreseeable (5.9 nm) transistor channel length as per the International Technology Roadmap for Semiconductors (ITRS), by employing rigorous quantum transport simulations. By comparing with MoS2 based conventional FETs, it is found that the JL structure naturally lends MoS2 FETs with superior device electrostatics, and higher ON-current for both high-performance and low-standby-power applications, especially at high impurity doping densities. Along with the advantages of the MoS2 JL-FETs, the effects of impurity scattering induced carrier mobility degradation of JL-FETs is also highlighted as a key technological issue to be addressed for exploiting their unique features.
Xuejun Xie, Hamid T. Chorsi, Kunjesh Agashiwala, Hsun-Ming Chang, Jiahao Kang, Jae Hwan Chu, Ibrahim Sarpkaya, Han Htoon, Jon A. Schuller, Kaustav Banerjee
The demand for higher resolution displays drives the demand for smaller pixels. Displays show a trend of doubling the pixel number every 4 years and doubling the pixel per inch (PPI) every 6 years. As the prospective candidate for next-generation display technology, microLED (micro Light Emitting Diode) will suffer from sidewall current leakage and poor extraction efficiency as its lateral size reduces. Using Finite Element Analysis (FEA) method and Finite-Difference Time-Domain (FDTD) method, we find that reducing the thickness of the LED can reduce the current leaking to the sidewalls and reduce the total internal reflection simultaneously. A promising solution to this problem is by using atomically thin 2D materials to make LEDs. However, monolayer inorganic 2D materials that can provide red, green and blue emission are still lacking. Based on the blue light-emitting material fluorographene (CF), partially fluorinated graphene (CFx) is synthesized in this work to emit red and green colors from 683 nm to 555 nm (limited by the instrument). This work also demonstrates lithographically defined regions with different colors, paving the way for the scaling of microLED.