Showing 1–20 of 20 results
/ Date/ Name
Apr 17, 2026Direct Orientation Contrast Imaging of Anti-Phase Domains on III-V Materials Using Scanning Electron MicroscopyJun 10, 2025Full ab initio atomistic approach for morphology prediction of hetero-integrated crystals: A confrontation with experimentsDec 16, 2024On the importance of Ni-Au-Ga interdiffusion in the formation of a Ni-Au / p-GaN ohmic contactOct 9, 2023Quasi van der Waals Epitaxy of Rhombohedral-stacked Bilayer WSe2 on GaP(111) HeterostructureMar 28, 2022Defect free strain relaxation of microcrystals on mesoporous patterned siliconMar 17, 2022Continuous-Wave Second-Harmonic Generation in Orientation-Patterned GaP Waveguides at Telecom WavelengthsDec 13, 2021Regulated dynamics with two-monolayer steps in vapor-solid-solid growth of nanowiresJun 15, 2021Highly linear polarized emission at telecom bands in InAs/InP quantum dot-nanowires by geometry tailoringJan 8, 2021Relaxation mechanism of GaP grown on 001 Sisubstrates: influence of defects on the growth of AlGaPlayers on GaP/Si templatesJan 7, 2021Dynamic formation of spherical voids crossing linear defectsNov 23, 2020Highly Ordered Boron Nitride/Epigraphene Epitaxial Films on Silicon Carbide by Lateral Epitaxial DepositionAug 22, 2019Single-electron tunneling PbS/InP neuromorphic computing building blocksOct 22, 2015Interplay between tightly focused excitation and ballistic propagation of polariton condensates in a ZnO microcavityOct 15, 2015Nano selective area growth of GaN by MOVPE on 4H-SiC using epitaxial graphene as a mask: towards integrated III-nitride / graphene / SiC electronics and optoelectronicsMay 26, 2012Conductance statistics from a large array of sub-10 nm molecular junctionsJan 2, 2011Quasi one-dimensional transport in single GaAs/AlGaAs core-shell nanowiresFeb 18, 2010Quantum well infrared photodetectors hardiness to the non ideality of the energy band profileOct 28, 2009Interface roughness transport in THz quantum cascade detectorsFeb 16, 2006Magnetic properties and domain structure of (Ga,Mn)As films with perpendicular anisotropyNov 29, 2004Long-range ordering of III-V semiconductor nanostructures by shallowly buried dislocation networks