Benedikt Tissot, Michael Trupke, Philipp Koller, Thomas Astner, Guido Burkard
Transition metal (TM) defects in silicon carbide (SiC) are a promising platform for applications in quantum technology. Some TM defects, e.g. vanadium, emit in one of the telecom bands, but the large ground state hyperfine manifold poses a problem for applications which require pure quantum states. We develop a driven, dissipative protocol to polarize the nuclear spin, based on a rigorous theoretical model of the defect. We further show that nuclear-spin polarization enables the use of well-known methods for initialization and long-time coherent storage of quantum states. The proposed nuclear-spin preparation protocol thus marks the first step towards an all-optically controlled integrated platform for quantum technology with TM defects in SiC.
Benedikt Tissot, Hugo Ribeiro, Florian Marquardt
Oct 23, 2023·quant-ph·PDF Reservoir engineering has become a prominent tool to control quantum systems. Recently, there have been first experiments applying it to many-body systems, especially with a view to engineer particle-conserving dissipation for quantum simulations using bosons. In this work, we explore the dissipative dynamics of these systems in the classical limit. We derive a general equation of motion capturing the effective nonlinear dissipation introduced by the bath and apply it to the special case of a Bose-Hubbard model, where it leads to an unconventional type of dissipative nonlinear Schrödinger equation. Building on that, we study the dynamics of one and two solitons in such a dissipative classical field theory.
Benedikt Tissot, Soubhadra Maiti, Emil R. Hellebek, Anders Søndberg Sørensen
Different quantum systems possess different favorable qualities. On the one hand, ensemble-based quantum memories are suited for fast multiplexed long-range entanglement generation. On the other hand, single-atomic systems provide access to gates for processing of information. Both of those can provide advantages for high-rate entanglement generation within quantum networks. We develop a hybrid architecture that takes advantage of these properties by combining trapped-ion nodes and nodes comprised of spontaneous parametric down conversion photon pair sources and absorptive memories based on rare-earth ion ensembles. To this end, we solve the central challenge of matching the different bandwidths of photons emitted by those systems in an initial entanglement-generation step. This enables the parallel execution of multiple probabilistic tasks in the initial stage. We show that our approach can lead to a significant speed-up for the fundamental task of creating ion-ion entanglement over hundreds of kilometers in a quantum network.
Benedikt Tissot, Guido Burkard
Dec 21, 2022·quant-ph·PDF Matter qubit to traveling photonic qubit conversion is the cornerstone of numerous quantum technologies such as distributed quantum computing, as well as several quantum internet and networking protocols. We formulate a theory for stimulated Raman emission which is applicable to a wide range of physical systems including quantum dots, solid state defects, and trapped ions, as well as various parameter regimes. We find the upper bound for the photonic pulse emission efficiency of arbitrary matter qubit states for imperfect emitters and show a path forward to optimizing the fidelity. Based on these results we propose a paradigm shift from optimizing the drive to directly optimizing the temporal mode of the flying qubit using a closed-form expression. Protocols for the production of time-bin encoding and spin-photon entanglement are proposed. Furthermore, the mathematical idea to use input-output theory for pulses to absorb the dominant emission process into the coherent dynamics, followed by a non-Hermitian Schrödinger equation approach has great potential for studying other physical systems.
Benedikt Tissot, Péter Udvarhelyi, Adam Gali, Guido Burkard
Transition metal (TM) defects in silicon carbide (SiC) are a promising platform for applications in quantum technology as some of these defects, e.g. vanadium (V), allow for optical emission in one of the telecom bands. For other defects it was shown that straining the crystal can lead to beneficial effects regarding the emission properties. Motivated by this, we theoretically study the main effects of strain on the electronic level structure and optical electric-dipole transitions of the V defect in SiC. In particular we show how strain can be used to engineer the g-tensor, electronic selection rules, and the hyperfine interaction. Based on these insights we discuss optical Lambda systems and a path forward to initializing the quantum state of strained TM defects in SiC.
Philipp Koller, Thomas Astner, Benedikt Tissot, Guido Burkard, Michael Trupke
Jan 10, 2025·quant-ph·PDF Vanadium in silicon carbide is a promising spin photon interface candidate with optical transitions in the telecom range and a long lived electron spin, hosted in an advanced semiconductor platform. In this detailed investigation of the defect's 16-dimensional ground state spin manifold at millikelvin temperatures, a wide range of previously unreported transitions are observed which are accurately described using a theoretical model that includes strain. Using a superconducting microcoil we achieve Rabi frequencies exceeding 20 MHz and perform the first coherent manipulation of a direct hyperfine transition. These insights further underscore the defect's potential for strain engineering and sensing, as well as for fault-tolerant qudit encoding.
Tzula B. Propp, Benedikt Tissot, Anders S. Sørensen, Stephanie D. C. Wehner
A single photon in a superposition of $d$ modes naturally encode a $d$-dimensional quantum system, a so-called qudit. We show that such superpositions can be leveraged to achieve a quantum speed-up of remote remote state preparation (RSP): a primitive for several quantum network protocols. For a superposition over $d\geq 2$ modes, the photon state can encode up to ${\rm Log}_2(d)$ qubits, which we exploit in a proposed reflection based RSP protocol with multiple variations. For single qubit RSP, we achieve a performance comparable to the best known existing schemes but with reduced requirements for phase stabilization. For many qubit RSP the achievable success rates remain high despite needing exponentially many temporal modes, since only one photon needs to be transmitted and detected to prepare multiple qubits. By simultaneously preparing many qubits at once, we bypass limited qubit lifetimes limited qubit lifetimes and improve fidelities beyond what is achievable with existing RSP protocols.
Benedikt Tissot, Guido Burkard
Transition metal (TM) defects in silicon carbide have favorable spin coherence properties and are suitable as quantum memory for quantum communication. To characterize TM defects as quantum spin-photon interfaces, we model defects that have one active electron with spin 1/2 in the atomic $D$ shell. The spin structure, as well as the magnetic and optical resonance properties of the active electron emerge from the interplay of the crystal potential and spin-orbit coupling and are described by a general model derived using group theory. We find that the spin-orbit coupling leads to additional allowed transitions and a modification of the $g$-tensor. To describe the dependence of the Rabi frequency on the magnitude and direction of the static and driving fields, we derive an effective Hamiltonian. This theoretical description can also be instrumental to perform and optimize spin control in TM defects.
Benedikt Tissot, Guido Burkard
Transition metal (TM) defects in silicon carbide (SiC) are a promising platform in quantum technology, especially because some TM defects emit in the telecom band. We develop a theory for the interaction of an active electron in the $D$-shell of a TM defect in SiC with the TM nuclear spin and derive the effective hyperfine tensor within the Kramers doublets formed by the spin-orbit coupling. Based on our theory we discuss the possibility to exchange the nuclear and electron states with potential applications for nuclear spin manipulation and long-lived nunclear-spin based quantum memories.
Ferdinand Omlor, Benedikt Tissot, Guido Burkard
Oct 28, 2024·quant-ph·PDF A general entanglement generation protocol between remote stationary qubits using single-photon reflection in a photonic network is explored theoretically. The nodes of the network consist of single qubits that are typically represented by the spin of a color center, each localized in a separate optical cavity and linked to other nodes via photonic links such as optical fibers. We derive a model applicable to a wide range of parameters and scenarios to describe the nodes and the local spin-photon interaction accounting for the pulsed (finite bandwidth) nature of flying single photons while optimizing the rate and fidelity. We investigate entanglement generation between remote qubits and tailor protocols to a variety of physical implementations with different properties. Of particular interest is the regime of weak coupling and low cooperativity between spin and cavity which is relevant in the cases of the nitrogen and silicon vacancy centers in diamond. We also take into account the variability of the properties between realistic (stationary) nodes.
Benedikt Tissot, Soubhadra Maiti, Emil R. Hellebek, Anders Søndberg Sørensen
In an accompanying paper [1], we introduced an approach to interface trapped-ion quantum processors with ensemble-based quantum memories by matching a spontaneous parametric down conversion source to both the ions and the memories. This enables rapid entanglement generation between single trapped ions separated by distances of hundreds of kilometers. In this article, we extend the protocol and provide additional details of the analysis. Particularly, we compare a double-click and single-click approaches for the ion edge nodes. The double-click approach relaxes the phase stability requirement but is strongly affected by finite efficiencies. Choosing the optimal protocol thus depends on the access to the phase stabilization as well as the efficiency of interface of the ions and ensemble-based memories.
Kasper H. Nielsen, Etienne Corminboeuf, Benedikt Tissot, Love A. Pettersson, Sven Scholz, Arne Ludwig, Leonardo Midolo, Anders S. Sørensen, Peter Lodahl, Ying Wang, Stefano Paesani
Apr 23, 2026·quant-ph·PDF High-quality photonic Bell state measurements (BSMs) enable scalable universal quantum computing and long distance quantum communication. However, when implemented with linear optics, BSMs are fundamentally probabilistic, introducing substantial hardware overheads and limiting noise tolerance in photonic quantum computing architectures. Nonlinear interactions at the single-photon level can overcome these limitations by enabling near-deterministic photon-photon gates. Here, we demonstrate a passive photon-sorting circuit based on the induced nonlinearity arising from photon scattering in a solid-state quantum emitter. The scattering is implemented in a directional waveguide-emitter coupling interface and embedded on-chip into a linear optical circuit, through which we demonstrate sorting of one- and two-photon components with a success probability of 62%. We find that the current system can enable BSMs with a 57% post-selected success probability without ancillary photons, exceeding the linear-optical limit of 50%, and can be readily improved to >65% with design optimisations.
Jonghoon Ahn, Christina Wicker, Nolan Bitner, Michael T. Solomon, Benedikt Tissot, Guido Burkard, Alan M. Dibos, Jiefei Zhang, F. Joseph Heremans, David D. Awschalom
May 25, 2024·quant-ph·PDF Optically interfaced solid-state defects are promising candidates for quantum communication technologies. The ideal defect system would feature bright telecom emission, long-lived spin states, and a scalable material platform, simultaneously. Here, we employ one such system, vanadium (V4+) in silicon carbide (SiC), to establish a potential telecom spin-photon interface within a mature semiconductor host. This demonstration of efficient optical spin polarization and readout facilitates all optical measurements of temperature-dependent spin relaxation times (T1). With this technique, we lower the temperature from about 2K to 100 mK to observe a remarkable four-orders-of-magnitude increase in spin T1 from all measured sites, with site-specific values ranging from 57 ms to above 27 s. Furthermore, we identify the underlying relaxation mechanisms, which involve a two-phonon Orbach process, indicating the opportunity for strain-tuning to enable qubit operation at higher temperatures. These results position V4+ in SiC as a prime candidate for scalable quantum nodes in future quantum networks.
Pasquale Cilibrizzi, Muhammad Junaid Arshad, Benedikt Tissot, Nguyen Tien Son, Ivan G. Ivanov, Thomas Astner, Philipp Koller, Misagh Ghezellou, Jawad Ul-Hassan, Daniel White, Christiaan Bekker, Guido Burkard, Michael Trupke, Cristian Bonato
Spin-active quantum emitters have emerged as a leading platform for quantum technologies. However, one of their major limitations is the large spread in optical emission frequencies, which typically extends over tens of GHz. Here, we investigate single V4+ vanadium centres in 4H-SiC, which feature telecom-wavelength emission and a coherent S=1/2 spin state. We perform spectroscopy on single emitters and report the observation of spin-dependent optical transitions, a key requirement for spin-photon interfaces. By engineering the isotopic composition of the SiC matrix, we reduce the inhomogeneous spectral distribution of different emitters down to 100 MHz, significantly smaller than any other single quantum emitter. Additionally, we tailor the dopant concentration to stabilise the telecom-wavelength V4+ charge state, thereby extending its lifetime by at least two orders of magnitude. These results bolster the prospects for single V emitters in SiC as material nodes in scalable telecom quantum networks.
Philipp Sohr, Philipp Koller, Sebastian Ecker, Matthias Fink, Thomas Scheidl, Rupert Ursin, Muhammad Junaid Arshad, Cristian Bonato, Pasquale Cilibrizzi, Adam Gali, Péter Udvarhelyi, Alberto Politi, Oliver J. Trojak, Misagh Ghezellou, Jawad Ul Hassan, Ivan G. Ivanov, Nguyen Tien Son, Guido Burkard, Benedikt Tissot, Joop Hendriks, Carmem M. Gilardoni, Caspar H. van der Wal, Christian David, Masa Mokhtarzadeh, Thomas Astner, Michael Trupke
Quantum communication promises unprecedented capabilities enabled by the transmission of quantum states of light. However, current implementations face severe distance limitations due to photon loss. Silicon carbide (SiC) defects have emerged as a promising quantum device platform, offering strong optical transitions, long spin coherence lifetimes and the opportunity for integration with semiconductor devices. Some defects with optical transitions in the telecom range have been identified, allowing to interface with fiber networks without the need for wavelength conversion. These unique properties make SiC an attractive platform for the implementation of quantum nodes for quantum communication networks. We provide an overview of the most prominent defects in SiC and their implementation in spin-photon interfaces. Furthermore, we model an exemplary, memory-enhanced quantum communication protocol in order to extract the parameters required to surpass a direct point-to-point link performance. Based on these insights, we summarize the key steps required towards the deployment of SiC devices in large-scale quantum communication networks.