Showing 1–20 of 23 results
/ Date/ Name
Aug 10, 2009Hole Spin Mixing in InAs Quantum Dot MoleculesOct 19, 2012Demonstration of quantum entanglement between a single electron spin confined to an InAs quantum dot and a photonApr 18, 2008Antibonding ground states in semiconductor artificial moleculesJan 29, 2009Electric field tunable exchange interaction in InAs/GaAs coupled quantum dotsMay 9, 2007Photoluminescence Spectroscopy of the Molecular Biexciton in Vertically Stacked Quantum Dot PairsMar 5, 2008A Single Charged Quantum Dot in a Strong Optical Field: Absorption, Gain, and the AC Stark EffectFeb 2, 2011Controlling the nuclear polarization in quantum dots using optical pulses with a modest bandwidthJul 10, 2006Spin Fine Structure in Optically Excited Quantum Dot MoleculesMay 3, 2009All-Optical Ultrafast Control and Read-Out of a Single Negatively Charged Self-Assembled InAs Quantum DotAug 20, 2004Optical pumping of electronic and nuclear spin in single charge-tunable quantum dotsJun 13, 2006Internal transitions of quasi-2D charged magneto-excitons in the presence of purposely introduced weak lateral potential energy variationsJul 12, 2007Stimulated Raman spin coherence and spin-flip induced hole burning in charged GaAs quantum dotsMar 6, 2020Spectral broadening of optical transitions at tunneling resonances in InAs/GaAs coupled quantum dot pairsJan 16, 2009Control of the direction and rate of nuclear spin flips in InAs quantum dots using detuned optical pulse trainsJan 29, 2009Characterization of the Shell Structure in Coupled Quantum Dots through Resonant Optical ProbingOct 27, 2009Fast spin rotations by optically controlled geometric phases in a quantum dotAug 8, 2006Electrically tunable g-factors in quantum dot molecular spin statesSep 14, 2006Electrical control of optical orientation of neutral and negatively charged excitons in n-type semiconductor quantum wellSep 6, 2006Engineering electron and hole tunneling with asymmetric InAs quantum dot moleculesJul 6, 2004Suppression of Dyakonov-Perel Spin Relaxation in high mobility n-GaAs