Showing 1–10 of 10 results
/ Date/ Name
Jul 12, 2012The origin of gate hysteresis in p-type Si-doped AlGaAs/GaAs heterostructuresDec 6, 2013Determining the stability and activation energy of Si acceptors in AlGaAs using quantum interference in an open hole quantum dotAug 23, 2012Extreme sensitivity of the spin-splitting and 0.7 anomaly to confining potential in one-dimensional nanoelectronic devicesApr 8, 2014Electron-beam patterning of polymer electrolyte films to make multiple nanoscale gates for nanowire transistorsApr 1, 2012The Impact of Small-Angle Scattering on Ballistic Transport in Quantum DotsDec 5, 2012The effect of (NH4)2Sx passivation on the (311)A GaAs surface and its use in AlGaAs/GaAs heterostructure devicesJun 18, 2013Electronic comparison of InAs wurtzite and zincblende phases using nanowire transistorsApr 29, 2017Hybrid nanowire ion-to-electron transducers for integrated bioelectronic circuitryOct 8, 2018Achieving short high-quality gate-all-around structures for horizontal nanowire field-effect transistorsMay 7, 2015InAs nanowire transistors with multiple, independent wrap-gate segments