Magnetotransport properties of (Ga,Mn)As investigated at low temperature and high magnetic field

Abstract Magnetotransport properties of ferromagnetic semiconductor (Ga,Mn)As have been investigated. Measurements at low temperature (50 mK) and high magnetic field ( ⩽27 T ) have been employed in order to determine the hole concentration p=3.5×10 20 cm −3 of a metallic (Ga 0.947 Mn 0.053 )As layer. The analysis of the temperature and magnetic field dependencies of the resistivity in the paramagnetic region was performed using the above value of p , which gave the magnitude of p – d exchange energy |N 0 β|∼1.5 eV .