Observation of type I/II transition in GaAs/InGaP heterostructure by C-V profiling

It is known in the literature that InGaP alloy synthesized within a certain range of growth temperature (520 - 720 degree Centrigrade) shows Cu-Pt crystal ordering. This ordering reduces the band gap energy . It was predicted that the ordering induced modification of energy levels of InGaP lowers its conduction band edge, which could change a type I band alignment at a GaAs/InGaP heterojunction to type II . Here we report the first observation of this ordering related type I/II transition for a GaAs/InGaP heterojunction by C-V profiling experiments done at room temperature .