MAXIMUM METALLIC CONDUCTIVITY IN SI-MOS STRUCTURES

According to the conventional theory of metals [1],the conductivity of the two-dimensional carrier systemshould vanish in the limit of zero temperatures. Recently,an unconventional metallic-like temperature dependenceof the conductivity was found in two-dimensional (2D)carrier systems in different materials [2,3]. The effectmanifests itself in the exponentially strongriseof the con-ductivity G (by about one order of magnitude in Si-MOSstructures where it is most pronounced [2]) as the tem-perature decreases below ∼ 0.3E