Raman response in doped antiferromagnets.
/ Authors
/ Abstract
The resonant part of the ${\mathit{B}}_{1\mathit{g}}$ electronic Raman scattering response is calculated within the t-J model on a planar lattice as a function of temperature and hole doping, using a finite-temperature diagonalization method for small systems. Results, directly applicable to experiments on cuprates, reveal on doping a very pronounced increase of the width of the two-magnon Raman peak, accompanied by a decrease of the total intensity. At the same time the peak position does not shift substantially in the underdoped regime. \textcopyright{} 1996 The American Physical Society.
Journal: Physical review. B, Condensed matter