Spin-dependent transport properties in GaMnAs-based spin hot-carrier transistors

The authors have investigated the spin-dependent transport properties of GaMnAs-based “three-terminal” semiconductor spin hot-carrier transistor (SSHCT) structures. The emitter-base bias voltage VEB dependence of the collector current IC, emitter current IE, and base current IB shows that the current transfer ratio α (=IC∕IE) and the current gain β (=IC∕IB) are 0.8–0.95 and 1–10, respectively, which means that GaMnAs-based SSHCTs have current amplification capability. In addition, the authors observed an oscillatory behavior of the tunneling magnetoresistance ratio with the increasing bias, which can be explained by the resonant tunneling effect in the GaMnAs quantum well.