Conductance Quantization in Schottky‐gated Si/SiGe Quantum Point Contacts

We report on the fabrication and electronic transport characterisation of Schottky‐gated strongly confined Si/SiGe quantum point contacts (QPC). At zero magnetic field and T=450mK the QPC conductance as a function of gate voltage shows a quantization in units of e2/h, indicative of transport through 1D modes which appear to lack both spin and valley degeneracy.