Electric-field inversion asymmetry: Rashba and Stark effects for holes in resonant tunneling devices

We report electric-field-induced modulation of the spin splitting during the charging and discharging processes of a $p$-type $\mathrm{GaAs}∕\mathrm{AlAs}$ double-barrier resonant-tunneling diode under an applied bias and magnetic field. In addition to the conventional Zeeman effect, we find experimental evidence of excitonic spin splitting produced by a combination of the Rashba spin-orbit interaction, the Stark effect, and the charge accumulation. The abrupt changes in the photoluminescence with the applied bias provide information about charge accumulation effects in the device.