Two-dimensional electron gas in InGaAs∕InAlAs quantum wells

We designed and performed low-temperature dc transport characterization studies on two-dimensional electron gases confined in lattice-matched In0.53Ga0.47As∕In0.52Al0.48As quantum wells grown by molecular beam epitaxy on InP substrates. The nearly constant mobility for samples with the setback distance larger than 50 nm and the similarity between the quantum and transport lifetime suggest that the main scattering mechanism is due to short range scattering, such as alloy scattering, with a scattering rate of 2.2ps−1. We also obtain the Fermi level at the In0.53Ga0.47As∕In0.52Al0.48As surface to be 0.36 eV above the conduction band, when fitting our experimental densities with a Poisson-Schrodinger model.