Tunable temperature-induced magnetization jump in aGdVO3single crystal

We report on a feature of the temperature-induced magnetization jump observed along the $a$ axis of the $\mathrm{Gd}\mathrm{V}{\mathrm{O}}_{3}$ single crystal at temperature ${T}_{\mathrm{M}}\ensuremath{\approx}8\phantom{\rule{0.3em}{0ex}}\mathrm{K}$. Below ${T}_{\mathrm{M}}$, the compound shows no coercivity and remanent magnetization indicating a homogenous antiferromagnetic structure. However, we will demonstrate that the magnetic state below ${T}_{\mathrm{M}}$ is indeed history dependent and it shows up in different jumps in the magnetization only when warming the sample through ${T}_{\mathrm{M}}$. Such a magnetic memory effect is highly unusual, suggesting different domain arrangements in the supposedly homogenous antiferromagnetic phase of the compound.