Transport Properties of 2D‐Electron Gas in a InGaAs/GaAs DQW in a Vicinity of Low Magnetic‐Field‐Induced Insulator‐Quantum Hall Liquid Transition
/ Authors
/ Abstract
The resistivity ρ of low mobility dilute 2D‐elecron gas in a InGaAs/GaAs double quantum well (DQW) exhibits the monotonic “insulating‐like” temperature dependence (dρ/dT 0.1) for our samples. We observed the coexistence of both the quantum Hall (QH) effect for the filling factors v = 2, 4 and the low magnetic field insulator — QH liquid (with v = 10) transition.
DOI: 10.1063/1.2730057