Investigation of Spin Voltaic Effect in a p–n Heterojunction

Model calculation and experimental data of circularly-polarized-light-dependent photocurrent in a n-GaAlAs/ p-GaInAs/ p-GaAs heterostructure are reported. It is found that, with appropriate heterojunction parameters, spin voltaic effect may survive across the heterojunction and give rise to detectable polarization-dependent photocurrent signals which are greater than those due to the magnetic-circular-dichroism background.