Orbital-assisted metal-insulator transition in VO2.
/ Authors
M. Haverkort, Zhiwei Hu, A. Tanaka, W. Reichelt, S. Streltsov, M. A. Korotin, V. Anisimov, H. Hsieh, H.J. Lin, C. Chen
and 2 more authors
/ Abstract
We found direct experimental evidence for an orbital switching in the V 3d states across the metal-insulator transition in VO2. We have used soft-x-ray absorption spectroscopy at the V L2,3 edges as a sensitive local probe and have determined quantitatively the orbital polarizations. These results strongly suggest that, in going from the metallic to the insulating state, the orbital occupation changes in a manner that charge fluctuations and effective bandwidths are reduced, that the system becomes more one dimensional and more susceptible to a Peierls-like transition, and that the required massive orbital switching can only be made if the system is close to a Mott insulating regime.
Journal: Physical review letters