Exchange biasing of the ferromagnetic semiconductor (Ga,Mn)As by MnO (invited)

We provide an overview of progress on the exchange biasing of a ferromagnetic semiconductor (Ga1−xMnxAs) by proximity to an antiferromagnetic oxide layer (MnO). We present a detailed characterization study of the antiferromagnetic layer using Rutherford backscattering spectrometry, x-ray photoelectron spectroscopy, transmission electron microscopy, and x-ray reflection. In addition, we describe the variation of the exchange and coercive fields with temperature and cooling field for multiple samples.