On the low-field insulator-quantum Hall conductor transitions

Abstract We studied the insulator-quantum Hall conductor transition which separates the low-field insulator from the quantum Hall state of the filling factor ν=4 on a gated two-dimensional GaAs electron system containing self-assembled InAs quantum dots. To enter the ν=4 quantum Hall state directly from the low-field insulator, the two-dimensional system undergoes a crossover from the low-field localization to Landau quantization. The crossover, in fact, covers a wide range with respect to the magnetic field rather than only a small region near the critical point of the insulator-quantum Hall conductor transition.