Two-dimensional metal-insulator transition and in-plane magnetoresistance in a high mobility strained Si quantum well

The apparent metal-insulator transition is observed in a high-quality two-dimensional electron system (2DES) in the strained Si quantum well of a Si/Si{sub 1-x}Ge{sub x} heterostructure with mobility {mu} = 1.9 x 10{sup 5} cm{sup 2}/V s at density n = 1.45 x 10{sup 11} cm{sup -2}. The critical density, at which the thermal coefficient of low T resistivity changes sign, is -0.32 x 10{sup 11} cm{sup -2}, a very low value obtained in Si-based 2D systems. The in-plane magnetoresistivity {rho}(B{sub ip}) was measured in the density range, 0.35 x 10{sup 11} B{sub c} , with B{sub c} the full spin-polarization field. Surprisingly, {rho}(B{sub c})/{rho}(0)-1.8 for all the densities, even down to n = 0.35 x 10{sup 11} cm{sup -2}, only 10% higher than n{sub c}. This is different from that in clean Si metal-oxide-semiconductor field-effect transistors, where the enhancement is strongly density dependent and {rho}(B{sub c})/{rho}(0) appears to diverge as n {yields} n{sub c}. Finally, we show that in the fully spin-polarized regime, dependent on the 2DES density, the temperaturemore » dependence of {rho}(B{sub ip}) can be either metallic-like or insulating.« less