Defect structure of the high-dielectric-constant perovskite Ca Cu 3 Ti 4 O 12

Using transmission electron microscopy (TEM) we studied CaCu{sub 3}Ti{sub 4}O{sub 12}, an intriguing material that exhibits a huge dielectric response, up to kilohertz frequencies, over a wide range of temperature. Neither in single crystals, nor in polycrystalline samples, including sintered bulk and thin films, did we observe the twin domains suggested in the literature. Nevertheless, in the single crystals, we saw a very high density of dislocations with a Burger vector of [110], as well as regions with cation disorder and planar defects with a displacement vector (1/4)[110]. In the polycrystalline samples, we observed many grain boundaries with oxygen deficiency, in comparison with the grain interior. The defect-related structural disorders and inhomogeneity, serving as an internal barrier layer capacitance in a semiconducting matrix, might explain the very large dielectric response of the material. Our TEM study of the structure defects in CaCu{sub 3}Ti{sub 4}O{sub 12} supports a recently proposed morphological model with percolating conducting regions and blocking regions.