Carrier Concentration Dependencies of Magnetization & Transport in Ga1−xMnxAs1−yTey
/ Authors
/ Abstract
We have investigated the transport and magnetization characteristics of Ga1−xMnxAs intentionally compensated with shallow Te donors. Using ion implantation followed by pulsed‐laser melting, we vary the Te compensation and drive the system through a metal‐insulator transition (MIT). This MIT is associated with enhanced low‐temperature magnetization and an evolution from concave to convex temperature‐dependent magnetization.
Journal: arXiv: Materials Science
DOI: 10.1063/1.1994621