Two aspects of the Mott–Hubbard transition in Cr-doped V2O3

Abstract The combination of bandstructure theory in the local density approximation with dynamical mean-field theory was recently successfully applied to V 2 O 3 —a material which undergoes the famous Mott–Hubbard metal–insulator transition upon Cr doping. The aim of this short paper is to emphasize two aspects of our recent results: (i) the filling of the Mott–Hubbard gap with increasing temperature, and (ii) the peculiarities of the Mott–Hubbard transition in this system which is not characterized by a divergence of the effective mass for the a 1 g -orbital.