Postgrowth annealing of (Ga,Mn) As under As capping: An alternative way to increase T-C

In situ postgrowth annealing of (Ga,Mn)As layers under As capping is adequate for achieving high Curie temperatures (TC) in a similar way as ex situ annealing in air or in N2 atmosphere practiced earlier. Thus, the first efforts give an increase of TC from 68 to 145 K after 2 h annealing at 180 °C. These data, in combination with lattice parameter determinations and photoemission results, show that the As capping acts as an efficient sink for diffusing Mn interstitials.