Negative magnetoresistance in (In, Mn)As semiconductors

The magnetotransport properties of an ${\mathrm{In}}_{0.95}{\mathrm{Mn}}_{0.05}\mathrm{As}$ thin film grown by metal-organic vapor phase epitaxy were measured. Resistivity was measured over the temperature range of 5 to $300\phantom{\rule{0.3em}{0ex}}\mathrm{K}$. The resistivity decreased with increasing temperature from 90 to $0.05\phantom{\rule{0.3em}{0ex}}\ensuremath{\Omega}\text{\ensuremath{-}}\mathrm{cm}$. The field dependence of the low temperature magnetoresistance was measured. A negative magnetoresistance was observed below $17\phantom{\rule{0.3em}{0ex}}\mathrm{K}$ with a hysteresis in the magnetoresistance observed at $5\phantom{\rule{0.3em}{0ex}}\mathrm{K}$. The magnetoresistance as a function of applied field was described by the Khosla\char21{}Fischer model for spin scattering of carriers in an impurity band.