Interaction correction to the longitudinal conductivity and Hall resistivity in high-quality two-dimensional GaAs electron and hole systems

We study the corrections in the low temperature limit to both the longitudinal conductivity and Hall resistivity due to electron-electron interactions in high-quality GaAs systems. Using the recent theory of Zala we find that the interaction corrections to the conductivity and Hall resistivity are consistent with each other in n-GaAs, although the agreement is not as good in p-GaAs. This suggests that interaction effects can explain the metallic drop in resistivity at B=0 in n-GaAs systems, but more work is required to understand p-GaAs systems.