Evidence for a structurally-driven insulator-to-metal transition in VO 2 : A view from the ultrafast timescale

We apply ultrafast spectroscopy to establish a time-domain hierarchy between structural and electronic effects in a strongly correlated electron system. We discuss the case of the model system ${\mathrm{VO}}_{2}$, a prototypical nonmagnetic compound that exhibits cell doubling, charge localization, and a metal-insulator transition below 340 K. We initiate the formation of the metallic phase by prompt hole photo-doping into the valence band of the low-$T$ insulator. The insulator-to-metal transition is, however, delayed with respect to hole injection, exhibiting a bottleneck time scale, associated with the phonon connecting the two crystallographic phases. This structural bottleneck is observed despite faster depletion of the $d$ bands and is indicative of important bandlike character for this controversial insulator.