Quantum Hall effect in a two-dimensional electron system bent by 90°
/ Authors
/ Abstract
Abstract Using a new MBE growth technique, we fabricate a two-dimensional electron system which is bent around an atomically sharp 90° corner. In the quantum Hall regime under tilted magnetic fields, we can measure equilibration between both co- and counter-propagating edge channels of arbitrary filling factor ratio. We present here 4-point magnetotransport characterization of the corner junction with unequal filling factor combinations which can all be explained using the standard Landauer–Buttiker edge channel picture. The success of this description confirms the realization of the first non-planar quantum Hall edge geometry.
Journal: Physica E-low-dimensional Systems & Nanostructures