Numerical study of hydrogenic effective mass theory for an impurity P donor in Si in the presence of an electric field and interfaces

In this paper we examine the effects of varying several experimental parameters in the Kane quantum computer architecture: A-gate voltage, the qubit depth below the silicon oxide barrier, and the back gate depth to explore how these variables affect the electron density of the donor electron. In particular, we calculate the resonance frequency of the donor nuclei as a function of these parameters. To do this we calculated the donor electron wave function variationally using an effective mass Hamiltonian approach, using a basis of deformed hydrogenic orbitals. This approach was then extended to include the electric field Hamiltonian and the silicon host geometry. We found that the phosphorous donor electron was very sensitive to all the experimental variables studied in our work, and thus to optimise the operation of these devices it is necessary to control all parameters varied in this paper.