Growth and properties of ferromagnetic In1−xMnxSb alloys
/ Authors
T. Wojtowicz, W. Lim, X. Liu, G. Cywiński, M. Kutrowski, L. Titova, K. Yee, M. Dobrowolska, J. Furdyna, K. Yu
and 8 more authors
W. Walukiewicz, G. B. Kim, M. Cheon, X. Chen, S. Wang, H. Luo, I. Vurgaftman, J. Meyer
/ Abstract
Abstract We discuss a new narrow-gap ferromagnetic (FM) semiconductor alloy, In 1− x Mn x Sb, and its growth by low-temperature molecular-beam epitaxy. The magnetic properties were investigated by direct magnetization measurements, electrical transport, magnetic circular dichroism, and the magneto-optical Kerr effect. These data clearly indicate that In 1− x Mn x Sb possesses all the attributes of a system with carrier-mediated FM interactions, including well-defined hysteresis loops, a cusp in the temperature dependence of the resistivity, strong negative magnetoresistance, and a large anomalous Hall effect. The Curie temperatures in samples investigated thus far range up to 8.5 K , which are consistent with a mean-field-theory simulation of the carrier-induced ferromagnetism based on the 8-band effective band-orbital method.
Journal: Physica E-low-dimensional Systems & Nanostructures