Quasiballistic transport in HgTe quantum-well nanostructures

The transport properties of micrometer scale structures fabricated from high-mobility HgTe quantum wells have been investigated. A special photoresist and Ti masks were used, which allow for the fabrication of devices with characteristic dimensions down to 0.45 μm. Evidence that the transport properties are dominated by ballistic effects in these structures is presented. Monte Carlo simulations of semiclassical electron trajectories show good agreement with the experiment.