High-Curie-temperature Ga1−xMnxAs obtained by resistance-monitored annealing

We show that by annealing Ga1−xMnxAs thin films at temperatures significantly lower than in previous studies, and monitoring the resistivity during growth, an unprecedented high Curie temperature TC and conductivity can be obtained. TC is unambiguously determined to be 118 K for Mn concentration x=0.05, 140 K for x=0.06, and 120 K for x=0.08. We also identify a clear correlation between TC and the room temperature conductivity. The results indicate that Curie temperatures significantly in excess of the current values are achievable with improvements in growth and post-growth annealing conditions.