Two-dimensional metallic state in silicon-on-insulator structures

In silicon-on-insulator metal oxide semiconductor structures with a peak mobility of 25,000 cm 2 /V s a strong drop of the resistivity towards low temperature has been observed. This metallic effect can be fitted by a linear-in-T term, which can be interpreted with both, the ballistic interaction corrections and the temperature dependent screening of impurity scattering. At low temperature and density in addition a strong increase of the resistivity towards lower T was observed, which is attributed to the contact regions of the sample.