Localizedfelectrons inCexLa1−xRhIn5: de Haas–van Alphen measurements

/ Authors

U. Alver, R. Goodrich, N. Harrison, D. Hall, E. Palm, T. Murphy, S. Tozer, P. G. Pagliuso, N. O. Moreno, J. Sarrao

and 4 more authors

Z. University, National High Magnetic Field Laboratory at Lanl, National High Magnetic Field Laboratory at Tallahassee, L. Laboratory

/ Abstract

Measurements of the de Haas-van Alphen effect in CexLa1-xRhIn5 reveal that the Ce 4f electrons remain localized for all x, with the mass enhancement and progressive loss of one spin from the de Haas-van Alphen signal resulting from spin fluctuation effects. This behavior may be typical of antiferromagnetic heavy fermion compounds, inspite of the fact that the 4f electron localization in CeRhIn5 is driven, in part, by a spin-density wave instability.

Journal: Physical Review B

DOI: 10.1103/PhysRevB.64.180402