Peak effect in the vortex state of V3Si: a study of history dependence

We present results of transport properties measurement on a single crystal of V 3 Si showing distinct signature of peak-effect (PE) in its vortex state. The field variation of the electrical resistance in the flux-line lattice prepared by different experimental path, namely zero field cooling and field cooling, shows a distinct path dependence in the vicinity of the PE regime. In the field cooled state, small cycling of magnetic field modifies the resistance drastically around the PE regime, highlighting the metastable nature of that state in the concerned regime.