Quantum transport in the cylindrical nanosize silicon-based MOSFET

Abstract A model is developed for a detailed investigation of the current flowingthrough a cylindrical nanosize MOSFET with a close gate electrode. Thequantum mechanical features of the lateral charge transport are described byWigner distribution function which is explicitly dealing with electron scatter-ing due to acoustic phonons and acceptor impurities. A numerical simulationis carried out to obtain a set of I-V characteristics for various channel lengths.It is demonstrated that inclusion of the collision term in the numerical simula-tion is important for low values of the source-drain voltage. The calculationshave further shown that the scattering leads to an increase of the electrondensity in the channel thereby smoothing out the threshold kink in I-V char-acteristics. An analysis of the electron phase-space distribution shows thatscattering does not prevent electrons from flowing through the channel as anarrow stream, and that features of both ballistic and diffusive transport maybe observed simultaneously.I. INTRODUCTION