Interface-charged impurity scattering in semiconductor MOSFETs and MODFETs: temperature-dependent resistivity and 2D ‘metallic` behavior
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/ Abstract
Abstract We present the results on the anomalous 2D transport behavior by employing Drude–Boltzmann transport theory and taking into account the realistic charge impurity scattering effects. Our results show quantitative agreement with the existing experimental data in several different systems and address the origin of the strong and nonmonotonic temperature-dependent resistivity.
Journal: Superlattices and Microstructures