Relativistic Fine Structure and Resonance Effects in Electron-Ion Recombination and Excitation of (e + C IV)

Relativistic close coupling calculations are reported for unified electronic recombination of (e + C IV) including non-resonant and resonant recombination processes, radiative and dielectronic recombination (RR and DR). Detailed comparison of the theoretical unified results with two recent experiments on ion storage rings (Mannervik etal. [1] and Schippers etal. [2]) shows very good agreement in the entire measured energy region 2s -- 2p with 2pnl resonances. The results benchmark theory and experiments to uncertainties of ~15%, and show that the resonant and the background cross sections are not an incoherent sum of separate RR and DR contributions. The limiting values of the DR cross sections, as n ---> infinity, are shown to correspond to those due to electron impact excitation (EIE) at the 2Po_(1/2,3/2) fine structure thresholds, delineated for the first time. The near-threshold 2s 2S_(1/2) - 2p 2Po_(1/2,3/2) EIE cross sections are also compared with recent experimental measurements. The demonstrated threshold fine structure and resonance effects should be of general importance in excitation and recombination of positive ions.