Ab initio calculations of the thermoelectric figure of merit, within the relaxation time approximation

In this paper, we propose a computational framework, based on the VASP and phono3py computer codes, to obtain the thermoelectric figure of merit from the electron-phonon and phonon-phonon interactions using finite displacements in supercells. Several numerical techniques are developed for efficiency. The method is applied to several thermoelectric materials. We found different behaviors for the lifetimes of the electrons in PbTe, PbSe, and in compounds of the half-Heusler and magnesium silicide family. This is traced back to the different frequencies of the phonons involved in the scattering around the Fermi level. They have a lower frequency in PbTe and PbSe. The magnitude of the thermoelectric figures of merit we computed compare well with experiments, but the agreement is far from perfect. The role of the defects, not explicitly considered in our calculations, but abundant in thermoelectric materials, is discussed as a possible explanation. It is also shown that the choice of the exchange-correlation functional can strongly impact the results.