Strong geometry dependence of the x-ray Thomson scattering spectrum in single crystal silicon

We report on results from an experiment at the European x-ray free electron laser where we measured the x-ray Thomson scattering (XRTS) spectrum of single crystal silicon with ultrahigh resolution. Compared to similar previous experiments, we consider a more complex scattering setup, in which the scattering vector changes orientation through the crystal lattice. In doing so, we are able to observe strong geometric dependencies in the inelastic scattering spectrum of silicon at low scattering angles. Furthermore, the high quality of the experimental data allows us to benchmark state-of-the-art TDDFT calculations, and demonstrate TDDFT’s ability to accurately predict these geometric dependencies. Finally, we note that this experimental data was collected at a much faster rate than another recently reported dataset using the same setup, demonstrating that ultrahigh resolution XRTS data can be collected in more general experimental scenarios.