Proton Irradiation on Hydrogenated Amorphous Silicon Flexible Devices

Radiation damage tests in hydrogenated amorphous silicon (a-Si:H) flexible flux and dose-measuring devices have been performed with a 3-MeV proton beam, to evaluate combined displacement and total ionizing dose damage. The tested devices had two different configurations and thicknesses. The first device was a 2-<inline-formula> <tex-math notation="LaTeX">$\mu $ </tex-math></inline-formula>m-thick n-i-p diode having a <inline-formula> <tex-math notation="LaTeX">$5\times 5$ </tex-math></inline-formula> mm area. The second device was a 5-<inline-formula> <tex-math notation="LaTeX">$\mu $ </tex-math></inline-formula>m-thick charge-selective contact (CSC) detector having the same area. Both the devices were deposited on a flexible polyimide substrate and were irradiated up to the fluence of <inline-formula> <tex-math notation="LaTeX">$10^{16}$ </tex-math></inline-formula> n_eq/cm². The response to different proton fluxes has been measured before irradiation and after irradiation at <inline-formula> <tex-math notation="LaTeX">$10^{16}$ </tex-math></inline-formula> n_eq/cm² for CSCs and n-i-p devices. The effect of annealing for partial performance recovery at <inline-formula> <tex-math notation="LaTeX">$100~^{\circ }$ </tex-math></inline-formula>C for 12 h was also studied, and a final characterization on annealed devices was performed. This test is the first combined displacement and total ionizing dose test on flexible a-Si:H devices.