Material Transfer and Contact Optimization in MoS2 Nanotube Devices

While the promise of clean and defect‐free MoS2$\left(\text{MoS}\right)_{2}$ nanotubes as quantum electronic devices is obvious, ranging from strong spin–orbit interaction to intrinsic superconductivity, device fabrication still poses considerable challenges. Deterministic transfer of transition metal dichalcogenide nanomaterials and transparent contacts to the nanomaterials are nowadays highly active topics of research, both with fundamental research and applications in mind. Contamination from transport agents as well as surface adsorbates and surface charges play a critical role for device performance. Many techniques have been proposed to address these topics for transition metal dichalcogenides in general. Herein, their usage for the transfer‐based fabrication of MoS2$\left(\text{MoS}\right)_{2}$ nanotube devices is analyzed. Further, different contact materials are compared in order to avoid the formation of a Schottky barrier.