A new Low Gain Avalanche Diode concept: the double-LGAD
physics.ins-det
/ Authors
F. Carnesecchi, S. Strazzi, A. Alici, R. Arcidiacono, N. Cartiglia, D. Cavazza, S. Durando, M. Ferrero, A. Margotti, L. Menzio
and 6 more authors
R. Nania, B. Sabiu, G. Scioli, F. Siviero, V. Sola, G. Vignola
/ Abstract
This paper describes the new concept of the double-LGAD. The goal is to increase the charge at the input of the electronics, keeping a time resolution equal or better than a standard (single) LGAD; this has been realized by adding the charges of two coupled LGADs while still using a single front-end electronics. The study here reported has been done starting from single LGAD with a thickness of 25 \textmu{m}, 35 \textmu{m} and 50 \textmu{m}.